SFH610A Datasheet, PDF (1/3 Pages) Infineon Technologies AG – 5.3 kV TRIOS Optocoupler High Reliability

SFH610A/617A
5.3 kV TRIOS^ Optocoupler
High Reliability
FEATURES
• Variety of Current Transfer Ratios at I_F=10 mA
– SFH610A/617A-1, 40–80%
– SFH610A/617A-2, 63–125%
– SFH610A/617A-3, 100–200%
– SFH610A/617A-4, 160–320%
• Low CTR Degradation
• Good CTR Linearity Depending on Forward Current
• Withstand Test Voltage, 5300 V_RMS
• High Collector-Emitter Voltage, V_CEO=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100" (2.54 mm) Spacing
• High Common-Mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
•
V
DE
VDE 0884 Available with Option 1
Dimensions in Inches (mm)
21
.255 (6.48)
.268 (6.81)
pin one ID
SFH610A
Anode 1
4 Emitter
34
Cathode 2
3 Collector
.030 (.76)
.045 (1.14)
.179 (4.55)
.190 (4.83)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
4°
typ.
.018 (.46)
.022 (.56)
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
.050 (1.27)
.100 (2.54)
10 °
3°–9.°_{008 (.20)}
.012 (.30)
SFH617A
.230 (5.84)
.250 (6.35)
.110 (2.79)
.130 (3.30)
Anode 1
4 Collector
DESCRIPTION
The SFH61XA features a high current transfer ratio, low
coupling capacitance and high isolation voltage. These
couplers have a GaAs infrared emitting diode emitter,
which is optically coupled to a silicon planar phototransis-
tor detector, and is incorporated in a plastic DIP-4
package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of >8.0 mm are
achieved with option 6. This version complies with IEC 950
(DIN VDE 0805) for reinforced insulation up to an opera-
tion voltage of 400 V_RMS or DC.
Specifications subject to change.
Cathode 2
3 Emitter
Maximum Ratings
Emitter
Reverse Voltage.........................................................................6.0 V
DC Forward Current.................................................................60 mA
Surge Forward Current (t_P≤10 µs) .............................................2.5 A
Total Power Dissipation.........................................................100 mW
Detector
Collector-Emitter Voltage ............................................................70 V
Emitter-Collector Voltage ...........................................................7.0 V
Collector Current .....................................................................50 mA
Collector Current (t_P≤1.0 ms).................................................100 mA
Total Power Dissipation.........................................................150 mW
Package
Isolation Test Voltage between Emitter and Detector,
refer to Climate DIN 40046, part 2, Nov. 74 ................. 5300 V_RMS
Creepage............................................................................ ≥7.0 mm
Clearance ........................................................................... ≥7.0 mm
Insulation Thickness between Emitter and Detector .......... ≥0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 ....................................... ≥175
Isolation Resistance
V_IO=500 V, T_A=25°C......................................................... ≥10¹² Ω
V_IO=500 V, T_A=100°C....................................................... ≥10¹¹ Ω
Storage Temperature Range ......................................–55 to +150°C
Ambient Temperature Range......................................–55 to +100°C
Junction Temperature .............................................................. 100°C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane ≥1.5 mm).................................... 260°C
 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–228
March 27, 2000-00