SDT12S60 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – Silicon Carbide Schottky Diode

Preliminary data
Silicon Carbide Schottky Diode

Worlds first 600V Schottky diode

Revolutionary semiconductor
material - Silicon Carbide

Switching behavior benchmark

No reverse recovery

No temperature influence on
the switching behavior

No forward recovery
SDT12S60
Product Summary
V_RRM
Q_c
I_F
600 V
30 nC
12 A
P-TO220-2-2.
Type
SDT12S60
Package
P-TO220-2-2.
Ordering Code
Q67040-S4470
Marking
D12S60
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, T_C=100°C
RMS forward current, f=50Hz
I_F
I _FRMS
Surge non repetitive forward current, sine halfwave I_FSM
T_C=25°C, t_p=10ms
Repetitive peak forward current
I _FRM
T_j=150°C, T_C=100°C, D=0.1
Non repetitive peak forward current
I _FMAX
t_p=10µs, T_C=25°C
i ²t value, T_C=25°C, t_p=10ms
Repetitive peak reverse voltage
i²dt
V_RRM
Surge peak reverse voltage
V_RSM
Power dissipation, T_C=25°C
Operating and storage temperature
P_tot
T_j , T_stg
Pin 1 Pin 2
C
A
Value
12
17
36
49
120
6.48
600
600
88.2
-55... +175
Pin 3
Unit
A
A²s
V
W
°C
Page 1
2002-01-14