SDT10S30 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Silicon Carbide Schottky Diode

Preliminary data
SDP10S30, SDB10S30
SDT10S30
Silicon Carbide Schottky Diode

Revolutionary semiconductor
material - Silicon Carbide

Switching behavior benchmark

No reverse recovery

No temperature influence on
the switching behavior

No forward recovery
P-TO220-2-2.
Product Summary
V_RRM
300 ^V
Q_c
23 nC
I_F
10 A
P-TO220-3.SMD P-TO220-3-1.
Type
SDP10S30
SDB10S30
SDT10S30
Package
P-TO220-3-1.
Ordering Code
Q67040-S4372
P-TO220-3.SMD Q67040-S4373
P-TO220-2-2. Q67040-S4447
Marking
D10S30
D10S30
D10S30
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, T_C=100°C
RMS forward current, f=50Hz
I_F
I_FRMS
Surge non repetitive forward current, sine halfwave I_FSM
T_C=25°C, t_p=10ms
Repetitive peak forward current
T_j=150°C, T_C=100°C, D=0.1
Non repetitive peak forward current
t_p=10µs, T_C=25°C
i ²t value, T_C=25°C, t_p=10ms
Repetitive peak reverse voltage
I_FRM
I_FMAX

i² dt
V_RRM
Surge peak reverse voltage
Power dissipation, T_C=25°C
Operating and storage temperature
V_RSM
P_tot
T_j , T_stg
Pin 1
n.c.
n.c.
C
PIN 2
C
C
A
Value
10
14
36
45
100
6.5
300
300
65
-55... +175
PIN 3
A
A
Unit
A
A²s
V
W
°C
Page 1
2001-12-04