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| SDT05S60_08 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Silicon Carbide Schottky Diode | |||
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Silicon Carbide Schottky Diode
⢠Worlds first 600V Schottky diode
⢠Revolutionary semiconductor
material - Silicon Carbide
⢠Switching behavior benchmark
⢠No reverse recovery
⢠No temperature influence on
the switching behavior
⢠No forward recovery
SDT05S60
thinQ!Â¥ SiC Schottky Diode
Product Summary
VRRM
600 V
Qc
14 nC
IF
5A
PG-TO220-2-2.
Type
SDT05S60
Package
Ordering Code
PG-TO220-2-2. Q67040S4644
Marking Pin 1 Pin 2
D05S60 C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
IFRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
IFRM
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
IFMAX
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
³i2dt
VRRM
Surge peak reverse voltage
Power dissipation, TC=25°C
VRSM
Ptot
Operating and storage temperature
Tj , Tstg
Value
5
7.1
18.5
21
50
1.7
600
600
43
-55... +175
Unit
A
A²s
V
W
°C
Rev. 2.2
Page 1
2008-06-02
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