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| SDP20S30 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Silicon Carbide Schottky Diode | |||
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Preliminary data
SDP20S30
SDB20S30
Silicon Carbide Schottky Diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
No forward recovery
Product Summary
VRRM
Qc
IF
300 V
23 nC
2x10 A
P-TO220-3.SMD
P-TO220-3-1.
Type
SDP20S30
SDB20S30
Package
Ordering Code
P-TO220-3-1. Q67040-S4419
P-TO220-3.SMD Q67040-S4374
Marking
D20S30
S20S30
1 23
Maximum Ratings,at Tj = 25 °C, unless otherwise specified (per leg)
Parameter
Symbol
Value
Continuous forward current, TC=100°C
IF
10
RMS forward current, f=50Hz
I FRMS
14
Surge non repetitive forward current, sine halfwave IFSM
36
TC=25°C, tp=10ms
Repetitive peak forward current
I FRM
45
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
I FMAX
100
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
Surge peak reverse voltage
Power dissipation, single diode mode, TC=25°C
Operating and storage temperature
i2dt
VRRM
VRSM
Ptot
Tj , Tstg
6.5
300
300
65
-55... +175
Unit
A
A²s
V
W
°C
Page 1
2001-09-07
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