SDP06S60_08 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Silicon Carbide Schottky Diode

Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• Ideal diode for Power Factor
Correction up to 1200W¹⁾
• No forward recovery
SDP06S60
SDT06S60
thinQ!Â¥ SiC Schottky Diode
Product Summary
V_RRM
600 V
Q_c
21 nC
I_F
6A
PG-TO220-2-2.
P-TO220
Type
SDP06S60
SDT06S60
Package
P-TO220-3
PG-TO220-2-2.
Ordering Code
Q67040-S4371
Q67040-S4446
Marking
D06S60
D06S60
Pin 1
n.c.
C
Pin 2
C
A
Pin 3
A
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, T_C=100°C
RMS forward current, f=50Hz
I_F
I_FRMS
Surge non repetitive forward current, sine halfwave I_FSM
T_C=25°C, t_p=10ms
Repetitive peak forward current
I_FRM
T_j=150°C, T_C=100°C, D=0.1
Non repetitive peak forward current
I_FMAX
t_p=10µs, T_C=25°C
i ²t value, T_C=25°C, t_p=10ms
Repetitive peak reverse voltage
³i²dt
V_RRM
Surge peak reverse voltage
Power dissipation, T_C=25°C
V_RSM
P_tot
Operating and storage temperature
T_j , T_stg
Rev. 2.4
Page 1
Value
Unit
6
A
8.4
21.5
28
60
2.3
A²s
600
V
600
57.6
W
-55... +175
°C
2008-06-02