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| SDP06S60 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Silicon Carbide Schottky Diode | |||
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SDP06S60, SDB06S60
SDT06S60
Silicon Carbide Schottky Diode
⢠Worlds first 600V Schottky diode
⢠Revolutionary semiconductor
material - Silicon Carbide
⢠Switching behavior benchmark
⢠No reverse recovery
⢠No temperature influence on
the switching behavior
⢠Ideal diode for Power Factor
Correction up to 1200W1)
⢠No forward recovery
P-TO220-2-2.
thinQ! SiC Schottky Diode
Product Summary
VRRM
600 V
Qc
21 nC
IF
6A
P-TO220-3.SMD P-TO220-3-1.
Type
SDP06S60
SDB06S60
SDT06S60
Package
P-TO220-3-1.
Ordering Code
Q67040-S4371
P-TO220-3.SMD Q67040-S4370
P-TO220-2-2. Q67040-S4446
Marking
D06S60
D06S60
D06S60
Pin 1
n.c.
n.c.
C
Pin 2
C
C
A
Pin 3
A
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
IFRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
IFRM
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
IFMAX
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
â«i2dt
VRRM
Surge peak reverse voltage
Power dissipation, TC=25°C
VRSM
Ptot
Operating and storage temperature
Tj , Tstg
Value
6
8.4
21.5
28
60
2.3
600
600
57.6
-55... +175
Unit
A
A²s
V
W
°C
Rev. 2.0
Page 1
2004-03-23
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