SDD04S60 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Silicon Carbide Schottky Diode

Final data
SDP04S60, SDD04S60
SDT04S60
Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• Ideal diode for Power Factor
Correction up to 800W ¹⁾
• No forward recovery
P-TO220-2-2.
Product Summary
V_RRM
600 V
Q_c
13 nC
I_F
4A
P-TO252-3-1.
P-TO220-3-1.
Type
SDP04S60
SDD04S60
SDT04S60
Package
P-TO220-3-1.
P-TO252-3-1.
P-TO220-2-2.
Ordering Code
Q67040-S4369
Q67040-S4368
Q67040-S4445
Marking
D04S60
D04S60
D04S60
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, T_C=100°C
RMS forward current, f=50Hz
I_F
I_FRMS
Surge non repetitive forward current, sine halfwave I_FSM
T_C=25°C, t_p=10ms
Repetitive peak forward current
I_FRM
T_j=150°C, T_C=100°C, D=0.1
Non repetitive peak forward current
I_FMAX
t_p=10µs, T_C=25°C
i ²t value, T_C=25°C, t_p=10ms
Repetitive peak reverse voltage
∫i²dt
V_RRM
Surge peak reverse voltage
Power dissipation, T_C=25°C
V_RSM
P_tot
Operating and storage temperature
T_j , T_stg
Pin 1
n.c.
n.c.
C
PIN 2
C
A
A
Value
4
5.6
12.5
18
40
0.78
600
600
36.5
-55... +175
PIN 3
A
C
Unit
A
A²s
V
W
°C
Page 1
2004-02-11