PZTA42_07 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage

NPN Silicon High-Voltage Transistors
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary type: PZTA92 (PNP)
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
PZTA42
4
3
2
1
Type
PZTA42
Marking
Pin Configuration
PZTA42 _{1=B 2=C 3=E 4=C -}
-
Package
SOT223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation-
T_S ≤ 124 °C
Junction temperature
Storage temperature
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point²⁾
R_thJS
1_{Pb-containing package may be available upon special request}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
300
300
6
500
100
1.5
150
-65 ... 150
Value
≤ 17
Unit
V
mA
W
°C
Unit
K/W
1
2007-04-26