PXFC212551SC_15 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PXFC212551SC
Thermally-Enhanced High Power RF LDMOS FET
240 W, 28 V, 2110 – 2170 MHz
Description
The PXFC212551SC is a 240-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 2110
to 2170 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flanges. Manufactured with Infineon's advanced LDMOS process,
this device provides excellent thermal performance and superior
reliability.
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1600 mA
ƒ = 2165 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
21
48
20
Gain
40
19
32
18
Efficiency
24
17
16
16
8
15
29
pxfc212551sc_g1
0
33 37 41 45 49 53
Output Power (dBm)
PXFC212551SC
Package H-37248H-2
Features
• Broadband internal input and output matching
• Typical Pulsed CW performance, 2140 MHz, 28 V,
10 µs pulse width, 10% duty cycle, Class AB
- Output power at P_1dB = 240 W
- Efficiency = 50%
- Gain = 19 dB
• Capable of handling 10:1 VSWR @28 V, 240 W
(CW) output power
• Integrated ESD protection
• Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 1600 mA, P_OUT = 50 W avg, ƒ₁ = 2160 MHz, ƒ₂ = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
19
20.5
—
dB
h_D
25
28
—
%
IMD
—
–31
–27
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 03.1, 2015-04-13