PXFC192207SH Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Broadband internal input and output matching

PXFC192207SH
Thermally-Enhanced High Power RF LDMOS FET
220 W, 28 V, 1805 – 1990 MHz
Description
The PXFC192207SH is a 220-watt LDMOS FET intended for
use in multi-standard cellular power amplifier applications in
the 1805 to 1990 MHz frequency band. Features include input
and output matching, high gain and thermally-enhanced pack-
age with earless flanges. Manufactured with Infineon's ad-
vanced LDMOS process, this device provides excellent thermal
performance and superior reliability.
PXFC192207SH
Package H-37288G-4/2
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1600 mA, V_GS = 2.75 V,
ƒ = 1880 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
22
56
21
Gain
48
20
40
19
32
18
24
17
16
16
Efficiency
8
15
29
c192207sh_g1
0
33 37 41 45 49 53
Output Power (dBm)
Features
• Broadband internal input and output matching
• Typical Pulsed CW performance, 1880 MHz, 28 V,
10 µs pulse width, 10% duty cycle, class AB
- Output power at P_1dB = 220 W
- Efficiency = 55%
- Gain = 20 dB
• Typical single-carrier WCDMA performance, 1880
MHz, 28 V, 10 dB PAR @ 0.01% CCDF
- Output power = 50 W
- Efficiency = 29%
- Gain = 20 dB
- ACPR = –34 dBc @5 MHz
• Capable of handling 10:1 VSWR @28 V, 200 W
(CW) output power
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon production test fixture)
V_DD = 28 V, I_DQ = 1600 mA, P_OUT = 50 W avg, ƒ₁ = 1980 MHz, ƒ₂ = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
19
20
h_D
29
30.5
IMD
—
–32
Max
—
—
–29
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 02, 2014-10-31