PTVA127002EV_15 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTVA127002EV
Thermally-Enhanced High Power RF LDMOS FET
700 W, 50 V, 1200 – 1400 MHz
Description
The PTVA127002EV LDMOS FET is designed for use in power
amplifier applications in the 1200 to 1400 MHz frequency band.
Features include high gain and thermally-enhanced package with
bolt-down flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTVA127002EV
Package H-36275-4
Power Sweep, Pulsed RF
V_DD = 50 V, I_DQ = 300 mA, T_CASE = 25°C,
300 µs pulse width, 12% duty cycle
65
65
Output Power
55
55
45
45
35
35
25
1200 MHz ₂₅
Efficiency
1300 MHz
15
1400 MHz
a127002ev_g1-1
15
30 32 34 36 38 40 42 44 46 48
P_IN (dBm)
Features
• Broadband input and output matching
• High gain and efficiency
• Integrated ESD protection
• Low thermal resistance
• Excellent ruggedness
• Pb-free and RoHS compliant
• Capable of withstanding a 10:1 load mismatch
(all phase angles) at 700 W peak under RF pulse,
300 µS, 10% duty cycle.
RF Characteristics
Pulsed RF Performance (tested in Infineon test fixture)
V_DD = 50 V, I_DQ = 150 mA per side, P_OUT = 700 W, ƒ₁ = 1200 MHz, ƒ₂ = 1300 MHz, ƒ₃ = 1400 MHz, 300 µs pulse width,
12% duty cycle
Characteristic
Gain
Drain Efficiency
Gain Flatness
Return Loss
Symbol
Min
Typ
Max Unit
G_ps
15.5
16
—
dB
h_D
50
56
—
%
DG
—
1.0
1.3
dB
IRL
—
–20
–11
dB
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 03.1, 2015-06-18