PTVA120501EA Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz

PTVA120501EA
Thermally-Enhanced High Power RF LDMOS FET
50 W, 50 V, 1200 – 1400 MHz
Description
The PTVA120501EA LDMOS FET is designed for use in power ampli-
fier applications in the 1200 to 1400 MHz frequency band. Features
include high gain and thermally-enhanced package with bolt-down
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTVA120501EA
Package H-36265-2
Power Sweep, Pulsed RF
V_DD = 50 V, I_DQ = 50 mA, T_CASE = 25°C,
300 µs pulse width, 10% duty cycle
60
55
50
45
40
35
30
18
70
Efficiency
60
50
Output Power
40
1200 MHz
30
1300 MHz
20
1400 MHz
10
a120501ea_g1-1
22
26
30
34
38
P_IN (dBm)
Features
• Broadband input matching
• High gain and efficiency
• Typical Pulsed CW performance, 1200 – 1400MHz,
50 V, 300 µs pulse width, 10 % duty cycle, class AB
- Output power at P_1dB = 54 W
- Efficiency = 55%
- Gain = 16 dB
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant
• Capable of withstanding a 10:1 load mismatch
(all phase angles) at 50 W peak under RF pulse,
300 μS, 10% duty cycle.
RF Characteristics
Pulsed RF Performance (tested in Infineon test fixture)
V_DD = 50 V, I_DQ = 50 mA, P_OUT = 50 W, ƒ₁ = 1200 MHz, ƒ₂ = 1300 MHz, ƒ₃ = 1400 MHz, 300 µs pulse width, 10 % duty cycle
Characteristic
Gain
Drain Efficiency
Return Loss
Symbol
Min
Typ
Max Unit
G_ps
16.5
17
—
dB
h_D
46
50
—
%
IRL
—
–10
–7
dB
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02.1, 2016-05-26