PTVA120251EA Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Unmatched input and output

PTVA120251EA
Thermally-Enhanced High Power RF LDMOS FET
25 W, 50 V, 500 – 1400 MHz
Description
The PTVA120251EA LDMOS FET is designed for use in power ampli-
fier applications in the 500 MHz to 1400 MHz frequency band. Features
include high gain and a thermally-enhanced package with bolt-down
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTVA120251EA
Package H-36265-2
Power Sweep, Pulsed RF
V_DD = 50 V, I_DQ = 20 mA, T_CASE = 25°C
300 µs pulse width, 12% duty cycle
60
70
Efficiency
55
60
50
45
40
35
30
18
50
Output Power
40
1200 MHz
1300 MHz ₃₀
1400 MHz
1200 MHz
1300 Mhz
20
1400 MHz
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10
22
26
30
34
Input Power (dBm)
Features
• Unmatched input and output
• High gain and efficiency
• Integrated ESD protection
• ESD HBM Class 2, per ANSI/ESDA/JEDEC JS-001
• Low thermal resistance
• Excellent ruggedness
• Pb-free and RoHS-compliant
• Capable of withstanding a 10:1 load mismatch
(all phase angles) at P_OUT = 25 W, under CW
conditions
RF Characteristics
Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture)
V_DD = 50 V, I_DQ = 0.02 A, Input signal (t_r = 5 ns, t_f = 6.5 ns), 300 µs pulse width, 12% duty cycle, class AB test

P_1dB
P_3dB
Mode of operation
ƒ
IRL Gain Eff P_OUT Gain Eff P_OUT P_droop(pulse) t_r
t_f
(MHz) (dB) (dB) (%) (W) (dB) (%) (W) dB @ 30 W (ns) (ns)
Pulsed RF 1200 12 16.4 52
31 14.4 56
41
0.27
6
8
Pulsed RF 1300 11 16.0 56
32 14.0 59
40
0.20
6
8
Pulsed RF 1400 14 15.8 53
34 13.8 56
38
0.24
6
8
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Rev. 04.1, 2015-06-15