PTVA104501EH_16 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz

PTVA104501EH
Thermally-Enhanced High Power RF LDMOS FET
450 W, 50 V, 960 – 1215 MHz
Description
The PTVA104501EH LDMOS FET is designed for use in power ampli-
fier applications in the 960 to 1215 MHz frequency band. Features
include high gain and thermally-enhanced package with bolt-down
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTVA104501EH
Package H-33288-2
Power Sweep, Pulsed RF
V_DD = 50 V, I_DQ = 200 mA, T_CASE = 25°C,
128 µs pulse width, 10% duty cycle
65
65
Output power
Efficiency
55
55
45
45
35
960 MHz
35
1030 Mhz
25
1090 MHz ₂₅
1150 MHz
1215 MHz
15
a104501eh_g1
15
28 30 32 34 36 38 40 42 44
P_IN (dBm)
Features
• Broadband internal input and output matching
• High gain and efficiency
• Integrated ESD protection
• Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Excellent ruggedness
• Pb-free and RoHS compliant
• Capable of withstanding a 10:1 load mismatch
(all phase angles) at 450 W peak under RF pulse,
128 µS, 10% duty cycle.
RF Characteristics
Pulsed RF Performance (tested in Infineon test fixture) (tested in Infineon test fixture)
V_DD = 50 V, I_DQ = 200 mA, P_OUT = 450 W (peak), ƒ₁ = 960 MHz, ƒ₂ = 1090 MHz, ƒ₃ = 1215 MHz, RF pulse 128 µs,
10% duty cycle
Characteristic
Gain
Drain Efficiency
Gain Flatness
Return Loss
Symbol
Min
Typ
Max Unit
G_ps
16.5
17.5
—
dB
h_D
53
58
—
%
DG
—
0.85
1.8
dB
IRL
—
–9.5
–6
dB
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 02.1, 2016-04-19