PTVA093002TC Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 – 960 MHz

PTVA093002TC
Thermally-Enhanced High Power RF LDMOS FET
300 W, 50 V, 703 – 960 MHz
Description
The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in
multi-standard cellular power amplifier applications, it can be used as
single-ended or in a Doherty configuration. It features dual-path design,
input matching, and a thermally-enhanced surface-mount package.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTVA093002TC
Package H-49248H-4, formed leads
Single-carrier 3GPP WCDMA
V_DD = 50 V, I_DQ = 400 mA, ƒ = 758 MHz
3.84 MHz bandwidth, 10 dB PAR
24
20
Gain
16
60
Efficiency
40
20
12
0
8
-20
PAR @ 0.01% CCDF
4
-40
0
25
a093002tc-gr1a
-60
30 35 40 45 50 55
Average Output Power (dBm)
Features
• Typical CW performance in a combined-lead
50-ohm single-ended fixture, 780 MHz, 50 V
- Output power at P_1dB = 158 W
- Gain = 18.2 dB
- Efficiency = 52%
• Typical pulsed CW performance in a combined-lead
50-ohm single-ended fixture, 870 MHz, 50 V
- Output power at P_3dB = 280 W
- Gain = 16.2 dB
- Efficiency = 50%
• Integrated ESD protection, Human Body Model
class 2 (per JESD22-A114)
• Capable of withstanding a 10:1 load mismatch at
50 V, 63 W (CW) output power
• Low thermal resistance
• Pb-free and RoHS compliant
RF Specifications
Single-carrier WCDMA Characteristics (device with flat leads tested in an Infineon Doherty production test fixture)
V_DD = 50 V, I_DQ = 400 mA, V_GSpeak = 1.9 V, P_OUT = 63 W average, ƒ = 803 MHz.
3GPP WCDMA signal: 3.84 MHz bandwidth, 10 dB PAR @0.01% CCDF.
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
Adjacent Channel Power Ratio
G_ps
17.5 18.5
—
dB
η_D
40
45
—
%
ACPR
—
–34
–32
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 04, 2014-06-16