PTVA047002EV_15 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTVA047002EV
Thermally-Enhanced High Power RF LDMOS FET
700 W, 50 V, 470 – 806 MHz
Description
The PTVA047002EV LDMOS FET is designed for use in power amplifier
applications in the 470 MHz to 806 MHz frequency band. Features
include high gain and thermally-enhanced package with bolt-down flange.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTVA047002EV
Package H-36275-4
DVB-T Performance
Drain Efficiency, Gain vs Frequency
V_DD= 50 V, I_DQ = 1.2 A, P_OUT = 135 W avg
34
30
Drain Efficiency
26
22
18
Gain
14
ptva047002ev_g5
450 500 550 600 650 700 750 800 850
Frequency (MHz)
Features
• Input matched
• Integrated ESD protection
• Low thermal resistance
• High gain
• Thermally enhanced package
• RoHS compliant
• Capable of withstanding a 10:1 VSWR at
130 W average power under DVB-T signal
condition
• Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
RF Characteristics
DVB-T (8K OFDM, 64QAM) Characteristics (tested in Infineon test fixture, narrowband 806 MHz)
V_DD = 50 V, I_DQ = 1200 mA, ƒ = 806 MHz, input PAR = 10.5 dB (unclipped), output PAR = 7.8 dB @ 0.01% CCDF probability
Characteristic
Symbol Min Typ Max Unit
Average Output Power
Gain
Drain Efficiency
Adjacent Channel Power Ratio
P_OUT
—
130
—
W
G_ps
16.5 17.5
—
dB
h_D
24
29
—
%
ACPR
—
–29.5
–25
dBc
(ACPR integrated over 200 KHz BW at + 4.3 MHz offset from center frequency)
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 04.1, 2015-07-08