PTVA042502EFC_16 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 – 806 MHz

PTVA042502EC
PTVA042502FC
Thermally-Enhanced High Power RF LDMOS FET
250 W, 50 V, 470 – 806 MHz
Description
The PTVA042502EC and PTVA042502FC LDMOS FETs are designed
for use in power amplifier applications in the 470 MHz to 806 MHz
frequency band. Features include high gain and thermally-enhanced
package with bolt-down or earless flanges. Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal per-
formance and superior reliability.
DVB-T Performance
Efficiancy, Gain and
IMD3 Shoulder vs Frequency
V_DD = 50 V, I_DQ = 800 mA, P_OUT = 55 W avg
35
-23
30
-25
Efficiency
25
-27
20
Gain
-29
15
-31
IMD ^AS^Ch^Po^Rulder
10
ptva042502fc_g1
-33
450 500 550 600 650 700 750 800 850
Frequency (MHz)
PTVA042502EC
Package H-36248-4
PTVA042502FC
Package H-37248-4
Features
• Input matched
• Integrated ESD protection
• Human Body Model Class 1C (per ANSI/
ESDA/JEDEC JS-001)
• Low thermal resistance
• RoHS compliant
• Capable of withstanding a 10:1 VSWR at 55W
average power under DVB-T signal condition
RF Characteristics
DVB-T (8K OFDM, 64QAM) Characteristics (tested in Infineon test fixture)
V_DD = 50 V, I_DQ = 800 mA, ƒ = 806 MHz, input PAR = 10.5 dB (unclipped), output PAR = 7.8 dB @ 0.01% CCDF probability
Characteristic
Symbol Min Typ Max Unit
Average Output Power
Gain
Drain Efficiency
Adjacent Channel Power Ratio
P_OUT
—
55
—
W
G_ps
17.5
19
—
dB
h_D
23
25.5
—
%
ACPR
—
–29.5
–25
dBc
(ACPR integrated over 200 KHz BW at + 4.3 MHz offset from center frequency)
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03.1, 2016-04-19