PTVA035002EV Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz

PTVA035002EV
Thermally-Enhanced High Power RF LDMOS FET
500 W, 50 V, 390 – 450 MHz
Description
The PTVA035002EV LDMOS FET is designed for use in power ampli-
fier applications in the 390 MHz to 450 MHz frequency band. Features
include high gain and thermally-enhanced package with bolt-down
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTVA035002EV
Package H-36275-4
Pulsed CW Performance
450 MHz, V_D = 50 V, I_DQ = 0.5 A,
12 µsec pulse width, 10% duty cycle
22
85
20
75
Gain
18
65
16
55
14
45
Efficiency
12
35
10
48
a035002 gr 1
25
50 52 54 56 58 60
Output Power (dBm)
Features
• Unmatched input and output
• High gain and efficiency
• Integrated ESD protection
• Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS-compliant
• Capable of withstanding a 13:1 load
mismatch at 57 dBm under pulsed
conditions: 12 µsec pulse width, 10% duty cycle
RF Characteristics
Pulsed CW Class AB Characteristics (not subject to production test, verified by design/characterization in Infineon test fixture)
V_DD = 50 V, I_DQ = 0.5 A, P_OUT = 500 W, ƒ = 450 MHz, 12 µsec pulse width, 10% duty cycle
Characteristic
Gain
Drain Efficiency
Symbol Min Typ
G_ps
—
18
h_D
—
64
Max
—
—
Unit
dB
%
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 05.2, 2016-06-08