PTVA030121EA Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz

PTVA030121EA
Thermally-Enhanced High Power RF LDMOS FET
12 W, 50 V, 390 – 450 MHz
Description
The PTVA030121EA is an LDMOS FET characterized for use in
power amplifier applications in the 390 MHz to 450 MHz frequency
band. Features include high gain and a thermally-enhanced package.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTVA030121EA
Package H-36265-2
CW Power Sweep
VDD = 50 V, IDQ = 30 mA, ƒ = 450 MHz
28
26 _Gain
24
22
20
18
16
14
31
Efficiency
33 35 37 39 41
Output Power (dBm)
90
80
70
60
50
40
30
3-1 ²⁰
43
Features
• Unmatched input and output
• Integrated ESD protection
• Human Body Model Class 1C (per ANSI/ESDA/
JEDEC JS-001)
• High gain, low thermal resistance
• Excellent ruggedness
• Capable of withstanding a 13:1 load mismatch at
50 V, 12 W, CW conditions
• Pb-free and RoHS compliant
RF Characteristics
CW Measurements
V_DD = 50 V, I_DQ = 50 mA, P_OUT = 12 W, ƒ = 450 MHz
Characteristic
Gain
Drain Efficiency
Symbol Min Typ
Gps
23
25
h_D
66
69
Max
—
—
Unit
dB
%
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 05.1, 2016-04-19