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PTRA093302FC Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 330 W, 50 V, 746 – 768 MHz
PTRA093302FC
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
330 W, 50 V, 746 – 768 MHz
Description
The PTRA093302FC is a 330-watt LDMOS FET with an asym-
metric design intended for use in multi-standard cellular power
amplifier applications in the 746 MHz to 768 MHz frequency band.
Features include dual-path design, input matching, high gain and
thermally-enhanced package with earless flange. Manufactured
with Infineon's advanced LDMOS process, this device provides
excellent thermal performance and superior reliability.
PTRA093302FC
Package H-37248-4
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ = 400 mA, ƒ = 768 MHz,
3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
24
60
Efficiency
20
40
16
20
Gain
12
0
8
-20
PAR @ 0.01% CCDF
4
-40
0
25
ptra093302dc_g1
-60
30 35 40 45 50 55
Average Output Power (dBm)
Features
• Input matched
• Asymmetric Doherty design
- Main: P1dB = 150 W Typ
- Peak: P1dB = 175 W Typ
• Typical Pulsed CW performance, 746–768 MHz,
48 V, combined outputs
- Output power at P1dB = 200 W
- Efficiency = 54%
- Gain = 16.5 dB
• Capable of handling 10:1 VSWR @48 V, 79 W (CW)
output power
• Integrated ESD protection
• Human Body Model Class 1C (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS-compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon Doherty production test fixture)
VDD = 48 V, IDQ = 400 mA, POUT = 79 W avg, VGS(peak) = (VGS @IDQ = 400 mA) – 3.0 V, ƒ = 768 MHz. 3GPP WCDMA signal:
peak/average = 10 dB @ 0.01% CCDF, channel bandwidth = 3.84 MHz.
Characteristic
Symbol
Gain
Gps
Drain Efficiency
D
Adjacent Channel Power Ratio
ACPR
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Min Typ
16.0 17.25
47.0 51.6
—
–32.5
Max
—
—
–30.0
Unit
dB
%
dBc
Rev. 03, 2016-03-16