PTMA210404FL_09 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Dual Wideband RF LDMOS Power Amplifier 40 W, 1800 – 2200 MHz

PTMA210404FL
Confidential, Limited Internal Distribution
Dual Wideband RF LDMOS Power Amplifier
40 W, 1800 – 2200 MHz
Description
The PTMA210404FL integrates two wideband, 20-watt, 2-stage
LDMOS integrated amplifiers into an open-cavity, ceramic package.
It is designed for use in cellular amplifier applications in the 1800-
2200 MHz frequency band. Manufactured with Infineon's advanced
LDMOS process, this amplifier offers excellent thermal performance
and superior reliability.
PTMA210404FL
Package H-34248-12
Features
Broadband Performance of Each Side
V_DD = 28 V, I_DQ1 = 60 mA, I_DQ2 = 120 mA
35
0
Gain
30
-5
25
-10
20
-15
15
Return Loss ^-20
10 Side A
Side B
5
1800
1900
2000
2100
Frequency (MHz)
-25
-30
2200
RF Characteristics
• Designed for wide RF and modulation bandwidths
and low memory effects
• Typical channel isolation = 26 dB
• Typical single channel performance CW, 2018
MHz, 28 V
- Output power at P-1dB = 20 W
- Linear Gain = 30.5 dB
- Efficiency = 54%
• Typical Doherty performance with six-carrier
TD-SCDMA signal, V_DD = 28 V, I_DQ1A = I_DQ1B = 55
mA, I_DQ2B = 110 mA, V_G2A = 1.06 V, ƒ = 2018 MHz
- Average output power = 10 W
- Linear Gain = 27 dB
- Efficiency = 35%
- ACLR1 = –33 dBc
- ACLR2 = –34 dBc
• Capable of handling 10:1 VSWR @ 28 V, 50 W
(CW) output power
• Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
• High-performance, thermally-enhanced package,
Pb-free and RoHS compliant, with low-gold plating
Six-carrier TD-SCDMA Measurements in Doherty Circuit (tested in Infineon test fixture)
V_DD = 28 V, I_DQ1A = I_DQ1B = 55 mA, I_DQ2B = 110 mA, V_GS2A = 1.05 V, P_OUT = 10 W average, ƒ = 2018 MHz, input PAR = 9.8 dB
@ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Alternate Channel Power Ratio
Symbol Min Typ
G_ps
η_D
ACPR
26
27
33
35
—
–33
Alt
—
–34
Max
—
—
–30
–31
Unit
dB
%
dBc
dBc
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 04, 2009-06-16