PTMA210152M Datasheet, PDF (1/15 Pages) Infineon Technologies AG – Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz

PTMA210152M
Confidential, Limited Internal Distribution
Wideband RF LDMOS Integrated Power Amplifier
15 W, 1800 – 2200 MHz
Description
The PTMA210152M is a wideband, matched, 15-watt, 2-stage
LDMOS integrated amplifier intended for wideband driver
applications in the 1800 to 2200 MHz band. This device is offered in
a 20-lead thermally-enhanced overmolded package for cool and
reliable operation.
PTMA210152M
Package PG-DSO-20-63
Broadband Performance
V_DD = 28 V, I_DQ1 = 80 mA, I_DQ1 = 160 mA
Fixture Tuned For 2110 - 2170 MHz
32
30
28
26
24
22
20
18
16
14
12
1500
Gain
Return Loss
1700 1900 2100 2300
Frequency (MHz)
20
15
10
5
0
-5
-10
-15
-20
-25
-30
2500
Features
• Designed for wide RF bandwidth and low memory
effects
• Broadband input on-chip matching
• Typical two-carrier WCDMA performance at
2140 MHz, 28 V, 7 W avg.
- Gain = 28.5 dB
- Efficiency = 33 %
- IMD3 = –32 dBc
• Typical CW performance at 2140 MHz, 28 V
- Output power at P–1dB ~ 20 W
- Efficiency > 49%
• Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
• Capable of handling 10:1 VSWR @ 28 V,
15 W (CW) output power
• Thermally-enhanced RoHS-compliant package
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test
fixture)
V_DS = 28 V, I_DQ1 = 80 mA, I_DQ2 = 160 mA, ƒ = 2110 – 2170 MHz, P_OUT = 7 W average
Characteristic
P_OUT Conditions
Symbol Min Typ
Max
Unit
Gain
G_ps
—
28.5
—
dB
Power Added Efficiency
η
—
33
—
%
Input Return Loss
IRL
—
–14
—
dB
Adjacent Channel Power Ratio
ACPR
—
–36
—
dBc
Intermodulation Distortion
IMD3
—
–32
—
dBc
table continued next page
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 15
Rev. 04, 2010-04-16