PTMA180402M_11 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Wideband RF LDMOS Integrated Power Amplifi er 40 W, 28 V, 1800 . 2100 MHz

PTMA180402M
Confidential, Limited Internal Distribution
Wideband RF LDMOS Integrated Power Amplifier
40 W, 28 V, 1800 – 2100 MHz
Description
The PTMA180402M is a matched, wideband, 2-stage, 40-watt
LDMOS integrated amplifier intended for base station applications
in the 1800 to 2100 MHz frequency band. This device is offered in
a 20-pin, thermally-enhanced, overmolded plastic package for cool
and reliable operation.
PTMA180402M
Package PG-DSO-20-63
Broadband Performance
V_DD = 28 V, I_DQ1 = 160 mA, I_DQ2 = 360 mA,
Fixture tuned for 1930 - 1990 MHz
34
5
30
0
Gain
26
-5
22
-10
18
-15
14
10
1700
Return Loss
1800 1900 2000 2100
Frequency (MHz)
-20
-25
2200
Features
• Designed for wide RF bandwidth and low memory
effects
• On-chip matching, integrated input DC block,
50-ohm input and ~4-ohm output
• Typical single-carrier CDMA performance at
1960 MHz, 28 V
- Average output power = 5 W
- Linear gain = 30 dB
- Efficiency = 16%
- Adjacent channel power = –52 dBc
• Typical two-tone CW performance at
1960 MHz, 28 V
- Output power (PEP) = 40 W at IMD3 = –30 dBc
- Efficiency = 34%
• Capable of handling 10:1 VSWR @ 28 V, 40 W
(CW) output power
• Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
• Thermally-enhanced, RoHS-compliant package
RF Characteristics
CDMA Measurements (tested in Infineon production test fixture)
V_DD = 28 V, I_DQ1 = 160 mA, I_DQ2 = 360 mA, P_OUT = 4 W average, ƒ = 1960 MHz, CDMA IS-95, 9 channels
Characteristic
Symbol Min Typ Max
Unit
Gain
Drain Efficiency
Adjacent Channel Power Ratio
G_ps
η_D
ACPR
28
30
—
dB
14
16
—
%
—
–52
–50
dBc
RF Characteristics continued next page
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Rev. 08, 2011-08-10