PTMA180402EL Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2000 MHz

Confidential, Limited Internal Distribution
Wideband RF LDMOS Integrated Power Amplifier
40 W, 1800 – 2000 MHz
Description
The PTMA180402EL and PTMA180402FL are matched, wideband
40-watt, 2-stage, LDMOS integrated amplifiers intended for use in
all typical modulation formats from 1800 to 2000 MHz. These devices
are offered in thermally-enhanced ceramic packages for cool and
reliable operation.
PTMA180402EL
Package H-33265-8
PTMA180402FL
Package H-34265-8
PTMA180402EL
PTMA180402FL
Broadband Performance
V_DD = 28 V, I_DQ1 = 110 m A, I_DQ1 = 330 mA
35
0
Gain
30
-5
25
-10
20
-15
Return Loss
15
-20
10
-25
5
1700
1800
1900 2000 2100
Frequency (MHz)
-30
2200
Features
• Designed for wide RF and modulation bandwidths
and low memory effects
• On-chip matching, integrated input DC block,
50-ohm input and > 5-ohm output
• Typical single-carrier CDMA performance at
1960 MHz, 28 V
- Average output power = 4 W
- Linear gain = 30 dB
- Efficiency = 14%
- Adjacent channel power = –53 dBc
• Typical 2-tone performance, 1960 MHz, 28 V
- Output power (PEP) = 50 W at IM3 = –30 dBc
- Efficiency = 33%
• Capable of handling 10:1 VSWR @ 28 V, 40 W
(CW) output power
• Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
• High-performance, thermally-enhanced packages,
Pb-free and RoHS compliant, with solder-friendly
plating
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 08, 2009-08-31