PTMA080304M Datasheet, PDF (1/16 Pages) Infineon Technologies AG – Dual Wideband RF LDMOS Power Amplifier 30 W, 700-1000 MHz

PTMA080304M
Confidential, Limited Internal Distribution
Dual Wideband RF LDMOS Power Amplifier
30 W, 700 – 1000 MHz
Description
The PTMA080304M integrates two wideband 2-stage LDMOS
integrated amplifier in a 20-lead plastic package. It is designed for use
in cellular amplifier applications in the 700 to 1000 MHz frequency
band. Manufactured with Infineon's advanced LDMOS process,
it offers excellent thermal performance and superior reliability.
PTMA080304M
Package PG-DSO-20-63
Broadband Performance
Small Signal CW Gain & Return Loss,
Single side
V_DD1 = V_DD2 = 28 V, I_DQ1 = 80 mA, I_DQ2 = 120 mA
34
20
32
Gain
10
30
0
28
-10
26
-20
IRL
24
-30
22
6507
30
8108
90
970
Frequency (MHz)
-40
1050
Features
• Typical channel isolation = 20 dB
• Typical CW single channel performance,
960 MHz, 28 V
- P_OUT = 20 W
- Efficiency = 50%
• Typical GSM / EDGE performance of each
channel, 960 MHz, 28 V
- Average output power = 8 W
- Gain = 30 dB
- Efficiency = 33%
- EVM = 1.91%
- ACPR @ 400 KHz = –63 dBc
- ACPR @ 600 KHz = –76 dBc
• Capable of handling 10:1 VSWR @ 28 V, 15 W
(CW) output power
• Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
• RoHS compliant
RF Characteristics
Single-carrier WCDMA Measurements (single side, not subject to production test—verified by design/characterization in
Infineon test fixture)
V_DD = 28 V, I_DQ1 = 80 mA, I_DQ2 = 120 mA, P_OUT = 6 W average, ƒ = 960 MHz, 3GPP signal, Test Model 1W/ 64DPCH,
channel bandwidth = 3.84 MHz, peak/average = 7.5 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Power Added Efficiency
G_ps
—
31
—
dB
h
—
31
—
%
Intermodulation Distortion
IMD
—
–35
—
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 16
Rev. 02, 2010-06-02