PTMA080302M Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Wideband RF LDMOS Integrated Power Amplifier 30 W, 700 – 1000 MHz

PTMA080302M
Confidential, Limited Internal Distribution
Wideband RF LDMOS Integrated Power Amplifier
30 W, 700 – 1000 MHz
Description
The PTMA080302M is a wideband, matched, 30-watt, 2-stage
LDMOS integrated amplifier intended for use in all typical modulation
formats from 700 to 1000 MHz. This device is offered in a 20-lead,
thermally-enhanced, overmolded package for cool and reliable
operation.
PTMA080302M
Package PG-DSO-20-63
Broadband Performance
V_DD = 28 V, I_DQ1 = 120 mA, I_DQ2 = 280 mA,
fixture tuned for 920 - 960 MHz
35
10
30
5
25 _Gain
0
20
-5
15
-10
10
-15
5 Return Loss
-20
0
-25
700 750 800 850 900 950 1000 1050 1100
Frequency (MHz)
Features
• Designed for wide RF modulation bandwidths,
and low memory effects
• On-chip matching, integrated input DC block,
50-ohm input and ~ 8-ohm output
• Typical GSM/EDGE performance, 940 MHz, 28 V
- Output power = 15 W Avg.
- Linear gain = 31 dB
- Power added efficiency = 36%
- EVM at 15 W = 1.7 %
- ACPR at 400 kHz = –61 dBc
- ACPR at 600 kHz = –73 dBc
• Typical CW performance at 940 MHz, 28 V
- Output power at P–1dB = 32 W
- Linear gain (1 W) = 31 dB
- Power added efficiency = 46%
• Capable of handling 10:1 VSWR @ 28 V, 30 W
(CW) output power
• Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
• RoHS-compliant package
RF Characteristics
GSM/EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ1 = 120 mA, I_DQ2 = 280 mA, ƒ = 920 to 960 MHz, P_OUT = 15 W Avg.
Characteristic
Symbol Min Typ
Max
Unit
Gain
Power-added Efficiency
G_ps
—
31
—
dB
PAE
—
36
—
%
Error Vector Magnitude
EVM (RMS) —
1.7
—
%
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 04, 2010-04-16