PTMA080152M Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz

PTMA080152M
Confidential, Limited Internal Distribution
Wideband RF LDMOS Integrated Power Amplifier
15 W, 700 – 1000 MHz
Description
The PTMA080152M is a wideband, on-chip matched, 15-watt,
2-stage LDMOS integrated power amplifier intended for wideband
driver applications in the 700 to 1000 MHz frequency range. It is
offered in a 20-lead thermally-enhanced overmolded package for
cool and reliable operation.
PTMA080152M
Package PG-DSO-20-63
Two-tone Drive-up
V_DD = 28 V, I_DQ1 = 70 mA, I_DQ2 = 90 mA
ƒ = 920, 940, 960 MHz
50
45
40
35
30
25
20
15
10
5
0
27
-10
920 MHz
Efficiency
-15
940 MHz
-20
960 MHz
-25
-30
-35
IMD3
-40
-45
-50
-55
29 31 33 35 37 39 41
Average Output Power ( dBm )
-60
43
Features
• Broadband on-chip matching, 50-ohm input and
~10-ohm output
• Typical GSM/EDGE performance at 28 V, 920 to
960 MHz
- Gain = 30 dB
- Efficiency = 34% at 8 W output power
- EVM @ 8 W = 1.5%
- ACPR @ 400 kHz = –61 dBc
- ACPR @ 600 kHz = –75 dBc
• Typical CW performance, 940 MHz, 28 V
- Output power at P–1dB = 20 W
- Efficiency = 49%
• Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 20 W
(CW) output power
• RoHS-compliant package
RF Characteristics
GSM/EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ1 = 70 mA, I_DQ2 = 120 mA, ƒ = 920 to 960 MHz, P_OUT = 8 W Avg.
Characteristic
Symbol Min Typ
Max
Unit
Input Return Loss
IRL
—
–15
—
dB
Gain
Power Added Efficiency
G_ps
—
30
—
dB
η
—
34
—
%
Error Vector Magnitude
EVM (RMS) —
1.5
—
%
table continued next page
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 04, 2010-04-16