PTFB091802FC_15 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB091802FC
Thermally-Enhanced High Power RF LDMOS FET
180 W, 28 V, 920 – 960 MHz
Description
The PTFB091802FC LDMOS FET is designed for use in power
amplifier applications in the 920 MHz to 960 MHz frequency band.
Features include high gain and a thermally-enhanced package with
earless flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTFB091802FC
Package H-37248-4
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1400 mA, ƒ = 960 MHz
3GPP WCDMA signal,
PAR = 10.0 dB, 3.84 MHz BW
24
60
Gain
20
40
16
Efficiency
20
12
0
8
PAR @ 0.01% CCDF
-20
4
-40
0
25
-60 _{ptfb091802fc_g1}
30 35 40 45 50 55
Average Output Power (dBm)
Features
• Broadband internal input and output matching
• Dual path design (2 X 90 W)
• Typical CW performance at 960 MHz, 28 V
- Ouput power @ P_1dB = 206 W
- Efficiency = 56%
- Gain = 18 dB
• Capable of handling 10:1 VSWR @ 28 V, 180 W
(CW) output power
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS-compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon production test fixture)
V_DD = 28 V, I_DQ = 1400 mA, P_OUT = 55 W avg, ƒ₁ =920 MHz, ƒ₂ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Symbol
Gain
Drain Efficiency
Adjancent Channel Power Ratio
G_ps
h_D
ACPR
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Min Typ
18
19.5
32
34
—
–35
Max
—
—
–33
Unit
dB
%
dBc
Rev. 02, 2015-03-27