PTFA241301E Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz

PTFA241301E
PTFA241301F
Thermally-Enhanced High Power RF LDMOS FETs
130 W, 2420 – 2480 MHz
Description
The PTFA241301E and PTFA241301F are thermally-enhanced
130-watt, internally matched GOLDMOS ^® FETs intended for ultra-
linear applications. They are characterized for CDMA, CDMA2000,
Super3G (3GPP TSG RAN), and WiMAX operation from 2420 to
2480 MHz. Full gold metallization ensures excellent device lifetime
and reliability.
PTFA241301E
Package H-30260-2
PTFA241301F
Package H-31260-2
Three-carrier CDMA2000 Performance
V_DD = 28 V, I_DQ = 1150 mA, ƒ = 2450 MHz
45
-40
40
ACP Up
-45
35
-50
ACP Low
30
-55
25
-60
20
-65
Efficiency
15
ALT Up
-70
10
-75
5
-80
36 38 40 42 44 46 48
Output Power, Avg. (dBm)
Features
• Thermally-enhanced packaging, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical CDMA2000 performance at 2450 MHz
- Average output power = 25 W
- Linear Gain = 14 dB
- Efficiency = 25%
• Typical CW performance, 2420 MHz, 28 V
- Output power at P–1dB = 140 W
- Efficiency = 50%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 130 W
(CW) output power
RF Characteristics
Three-carrier CDMA2000 Measurements (not subject to production test—verified by design/characterization in
Infineon test fixture)
V_DD = 28 V, I_DQ = 1150 mA, P_OUT = 25 W average, ƒ = 2450 MHz
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
G_ps
—
14
—
dB
η_D
—
25
—
%
Adjacent Channel Power Ratio
ACPR
—
–50
—
dBc
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 12
Rev. 05, 2007-05-11