PTFA091503EL Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 150 W, 920-960 MHz

PTFA091503EL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
150 W, 920 – 960 MHz
Description
The PTFA091503EL is a 150-watt, internally-matched FET intended
for use in power amplifier applications in the 920 to 960 MHz band.
This device features internal I/O matching and thermally-enhanced
open cavity ceramic package. Manufactured with Infineon's advanced
LDMOS process, this device provides excellent thermal performance
and superior reliability.
Two-carrier WCDMA Performance
V_DD = 30 V, I_DQ = 1250 mA, ƒ = 960 MHz, 3GPP
WCDMA signal, PAR = 8 dB, 10 MHz carrier
spacing, 3.84MHz Bandwidth
60
-30
ACPR
50
-35
40
IMD
30
20
-40
-45
Efficiency
-50
10
0
30
Gain
35
40
45
Output Power (dBm)
-55
-60
50
PTFA091503EL
Package H-33288-6
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at
960 MHz, 30 V
- Average output power = 32 W
- Linear Gain = 17 dB
- Efficiency = 29%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –39 dBc
• Typical CW performance, 960 MHz, 30 V
- Output power at P_1dB = 150 W
- Linear Gain = 17 dB
- Efficiency = 54%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
150 W (CW) output power
• Pb-free, RoHS-compliant
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test
fixture)
V_DD = 30 V, I_DQ = 1250 mA, P_OUT = 32 W average
ƒ₁ = 950 MHz, ƒ₂ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
G_ps
—
17
—
dB
hD
—
29
—
%
Intermodulation Distortion
IMD
—
–37
—
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 03, 2010-08-11