PTF181301 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz

Developmental PTF181301
LDMOS RF Power Field Effect Transistor
130 W, 1805–1880 MHz
Description
Features
The PTF181301 is a 130 W, internally matched GOLDMOS FET intended
for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
EDGE EVM Performance
EVM & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 1.8 A, f = 1879.8 MHz
4
40
Ef f icienc y
3
30
2
20
1
10
• Broadband internal matching
• Typical EDGE performance
- Average output power = 55 W
- Gain = 15.5 dB
- Efficiency = 32%
- EVM = 1.7%
• Typical CW performance
- Output power at P–1dB = 150 W
- Gain = 14.5 dB
- Efficiency = 47%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
130 W (CW) output power
EVM
0
0
35 38 40 43 45 48 50
Output Power (dBm)
PTF181301A
Package 20260
ESD: Electrostatic discharge sensitive device—observe handling precautions!
RF Characteristics at T_CASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 1.8 A, P_OUT = 55 W, f = 1879.8 MHz
Characteristic
Symbol Min Typ
Max
Unit
Error Vector Magnitude
EVM (RMS) —
1.7
—
%
Modulation Spectrum @ 400 kHz
ACPR
—
–60
—
dBc
Modulation Spectrum @ 600 kHz
ACPR
—
–73
—
dBc
Gain
Drain Efficiency
G_ps
—
15.5
—
dB
η_D
—
32
—
%
Two–Tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 1.8 A, P_OUT = 130 W PEP, f = 1880 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Gain
Drain Efficiency at –30 dBc IM3
Intermodulation Distortion
G_ps
η_D
IMD
—
15.5
—
35
—
–30
Developmental Data Sheet
1 of 4
Max
—
—
—
Unit
dB
%
dBc
2004-04-28