IRLB8314PBF Datasheet, PDF (1/9 Pages) Infineon Technologies AG – HEXFET® Power MOSFET

IRLB8314PbF
Application
Optimized for UPS/Inverter Applications
Low Voltage Power Tools
Benefits
Best in Class Performance for UPS/Inverter Applications
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
Lead-Free, RoHS Compliant
D
G
S
Base part number Package Type
IRLB8314PbF
TO-220AB
G
Gate
Standard Pack
Form
Tube
Quantity
50
HEXFET^® Power MOSFET
V_DSS
R_DS(on) max
(@ V_GS = 10V)
(@ V_GS = 4.5V)
Qg _(typical)
I_{D (Silicon Limited)}
I_{D (Package Limited)}
30
2.4
3.2
40
171
130A
V
m
nC
A
GDS
TO-220AB
D
Drain
S
Source
Orderable Part Number
IRLB8314PbF
Absolute Maximium Rating
Symbol
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
T_J
Parameter
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Symbol
Parameter
R_JC
R_CS
Junction-to-Case 
Case-to-Sink, Flat Greased Surface
R_JA
Junction-to-Ambient 
Notes through  are on page 8
Max.
± 20
171
120
130
664
125
63
0.83
-55 to + 175
300
10 lbf·in (1.1 N·m)
Typ.
–––
0.50
–––
Max.
1.2
–––
62
Units
V
A
W
W
W/°C
°C
Units
°C/W
1
2016-08-04