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IRL7472L1PBF Datasheet, PDF (1/12 Pages) Infineon Technologies AG – DirectFET® N-Channel Power MOSFET | |||
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Application
ï¬ï ï ï Brushed Motor drive applications
ï¬ï BLDC Motor drive applications
ï¬ï Battery powered circuits
ï¬ï Half-bridge and full-bridge topologies
ï¬ï Synchronous rectifier applications
ï¬ï Resonant mode power supplies
ï¬ï OR-ing and redundant power switches
ï¬ï DC/DC and AC/DC converters
ï¬ï DC/AC Inverters
Benefits
ï¬ï ï ï Optimized for Logic Level Drive
ï¬ï ï ï Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
ï¬ï Fully Characterized Capacitance and Avalanche SOA
ï¬ï Enhanced body diode dv/dt and di/dt Capability
ï¬ï ï ï Lead-Free, RoHS Compliant
StrongIRFETâ¢
IRL7472L1TRPbF
DirectFET® N-Channel Power MOSFET ï
VDSS
RDS(on) typ.
max
@ VGS = 10V
RDS(on) typ.
max
@ VGS = 4.5V
ID (Package Limited)
40V
0.34mïï
0.45mïï
0.52mïï
0.70mïï
375Aï
S
S
D
S
G
S
L8
S
S
D
S
S
DirectFET⢠ISOMETRIC
Base part number
Package Type
IRL7472L1PbF Direct FET Large Can (L8)
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRL7472L1TRPbF
1.6
ID = 195A
1.4
1.2
1.0
0.8
TJ = 125°C
0.6
0.4
0.2
TJ = 25°C
0.0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
700
600
Limited by package
500
400
300
200
100
0
25
50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
2016-8-9
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