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| IRL60S216 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Half-bridge and full-bridge topologies | |||
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Application
ï¬ï Brushed Motor drive applications
ï¬ï BLDC Motor drive applications
ï¬ï Battery powered circuits
ï¬ï Half-bridge and full-bridge topologies
ï¬ï Synchronous rectifier applications
ï¬ï Resonant mode power supplies
ï¬ï OR-ing and redundant power switches
ï¬ï DC/DC and AC/DC converters
ï¬ï DC/AC Inverters
Benefits
ï¬ï Optimized for Logic Level Drive
ï¬ï Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
ï¬ï Fully Characterized Capacitance and Avalanche SOA
ï¬ï Enhanced body diode dV/dt and dI/dt Capability
ï¬ï Lead-Free*
ï¬ï RoHS Compliant, Halogen-Free
IR MOSFET
StrongIRFETâ¢
IRL60S216
IRL60SL216
HEXFET® Power MOSFET
D
VDSS
60V
RDS(on) typ.
1.6mïï
G
max
1.95mïï
ID (Silicon Limited)
298Aï
S
ID (Package Limited)
195A
D
D
S
G
D2Pak
IRL60S216
S
GD
TO-262
IRL60SL216
G
Gate
D
Drain
S
Source
Base part number
IRL60SL216
IRL60S216
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel
800
Orderable Part Number
IRL60SL216
IRL60S216
6
ID = 100A
5
4
TJ = 125°C
3
2
1
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
315
Limited By Package
270
225
180
135
90
45
0
25
50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
2016-1-19
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