IRFR6215PBF Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET® Power MOSFET

IRFR6215PbF
IRFU6215PbF
 P-Channel
 175°C Operating Temperature
 Surface Mount (IRFR6215)
 Straight Lead (IRFU6215)
 Advanced Process Technology
 Fast Switching
 Fully Avalanche Rated
 Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power MOSFETs are
well known for, provides the designer with an extremely efficient device
for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase,
infrared, or wave soldering techniques. The straight lead version
(IRFU series) is for through-hole mounting applications. Power
dissipation levels up to 1.5 watts are possible in typical surface
mount applications.
HEXFET^® Power MOSFET
V_DSS
R_DS(on)
I_D
-150V
0.295
-13A
D
D
S
G
D- Pak
IRFR6215PbF
S
GD
I- Pak
IRFU6215PbF
G
Gate
D
Drain
S
Source
Base part number
IRFU6215PbF
IRFR6215PbF
Package Type
I-Pak
D-Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Quantity
75
75
3000
Orderable Part Number
IRFU6215PbF
IRFR6215PbF
IRFR6215TRLPbF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ -10V
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
-13
-9.0
-44
110
0.71
± 20
310
-6.6
11
5.0
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R_JC
R_JA
R_JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount) 
Junction-to-Ambient
1
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
°C/W
2016-5-31