IRFI1310NPBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET® Power MOSFET

 Advanced Process Technology
 Isolated Package
 High Voltage Isolation = 2.5KVRMS 
 Sink to Lead Creepage Dist. = 4.8mm
 Fully Avalanche Rated
 Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety
of applications
The TO-220 Fullpak eliminates the need for additional insulating
hardware in commercial-industrial applications. The moulding
compound used provides a high isolation capability and a low
thermal resistance between the tab and external heatsink. This
isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
IRFI1310NPbF
HEXFET^® Power MOSFET
V_DSS
R_DS(on)
I_D
100V
0.036
24A
G
Gate
S
D
G
TO-220 Full-Pak
D
Drain
S
Source
Base Part Number
IRFI1310NPbF
Package Type
TO-220 Full-Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFI1310NPbF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
24
17
140
56
0.37
± 20
420
22
5.6
5.0
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R_JC
Junction-to-Case
R_JA
Junction-to-Ambient
Parameter
1
Typ.
–––
–––
Max.
2.7
65
Units
°C/W
2016-5-27