IRF9530NSPBF Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology Surface Mount

IRF9530NSPbF
IRF9530NLPbF
Benefits
 Advanced Process Technology
 Surface Mount (IRF9530NS)
 Low-profile through-hole(IRF9530NL)
 175°C Operating Temperature
 Fast Switching
 P-Channel
 Fully Avalanche Rated
 Lead-Free
Description
Fifth Generation HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF9530NL) is available for low-
profile applications.
HEXFET^® Power MOSFET
V_DSS
R_DS(on)
I_D
-100V
0.20
-14A
D
D
S
G
D2 Pak
IRF9530NSPbF
S
GD
TO-262 Pak
IRF9530NLPbF
G
Gate
D
Drain
S
Source
Base part number
IRF9530NLPbF
IRF9530NSPbF
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRF9530NLPbF (Obsolete)
IRF9530NSTRLPbF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ -10V 
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ -10V 
Pulsed Drain Current 
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
E_AS
Single Pulse Avalanche Energy (Thermally Limited) 
I_AR
Avalanche Current 
E_AR
Repetitive Avalanche Energy 
dv/dt
Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
Parameter
R_JC
Junction-to-Case
R_JA
Junction-to-Ambient ( PCB Mount, steady state) 
Max.
-14
-10
-56
3.8
79
0.53
± 20
250
-8.4
7.9
-5.0
-55 to + 175
300
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
1.9
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
2016-5-27