IRF7342PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET® Power MOSFET (VDSS = -55V , RDS(on) = 0.105Ω)

 Generation V Technology
 Ultra Low On-Resistance
 Dual P Channel MOSFET
 Surface Mount
 Available in Tape & Reel
 Dynamic dv/dt Rating
 Fast Switching
 Lead-Free
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
IRF7342PbF
HEXFET^® Power MOSFET
V_DSS
-55V
R_DS(on) max.
I_D
0.105
-3.4A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized lead frame for
enhanced thermal characteristics and multiple-die capability making it
ideal in a variety of power applications. With these improvements,
multiple devices can be used in an application with dramatically
reduced board space. The package is designed for vapor phase, infra
red, or wave soldering techniques. Power dissipation of greater than
0.8W is possible in a typical PCB mount application.
SO-8
IRF7342PbF
G
Gate
D
Drain
S
Source
Base part number
IRF7342PbF
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7342PbF
Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-Source Voltage
I_D @ T_A = 25°C
Continuous Drain Current, V_GS @ -10V
I_D @ T_A = 70°C
I_DM
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current 
P_D @T_A = 25°C
Maximum Power Dissipation
P_D @T_A = 70°C
Maximum Power Dissipation
Linear De rating Factor
V_GS
V_GSM
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp < 10µs
E_AS
dv/dt
Single Pulse Avalanche Energy (Thermally Limited) 
Peak Diode Recovery dv/dt 
T_J
T_STG
Operating Junction and
Storage Temperature Range
Thermal Resistance
Symbol
Parameter
R_JA
Junction-to-Ambient 
1
Max.
-55
-3.4
-2.7
-27
2.0
1.3
0.016
± 20
30
114
5.0
-55 to + 150
Typ.
–––
Max.
62.5
Units
V
A
W
mW°/C
V
mJ
V/ns
°C
Units
°C/W
2016-5-26