IRF6894MPBF Datasheet, PDF (1/10 Pages) Infineon Technologies AG – HEXFET® Power MOSFET plus Schottky Diode

IRF6894MPbF
IRF6894MTRPbF
HEXFET^® Power MOSFET plus Schottky Diode
RoHs Compliant Containing No Lead and Bromide 
Typical values (unless otherwise specified)
Integrated Monolithic Schottky Diode
Low Profile (<0.7 mm)
V_DSS
V_GS
R_DS(on)
R_DS(on)
Dual Sided Cooling Compatible 
25V min ±16V max 0.9m@ 10V 1.4m@ 4.5V
Low Package Inductance
Optimized for High Frequency Switching
Q_{g tot} Q_gd
Q_gs2
Q_rr
Q_oss
V_gs(th)
Ideal for CPU Core DC-DC Converters
31nC 10nC 3.0nC 58nC 33nC
1.6V
Optimized for Sync. FET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques 
100% Rg tested
S
Footprint compatible to DirectFET
DG
D
S
Applicable DirectFET^™ Outline and Substrate Outline (see p.7,8 for details) 
DirectFET™ ISOMETRIC
MX
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6894MPbF combines the latest HEXFET^® Power MOSFET Silicon technology with the advanced DirectFET^™ packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET^™ package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET^™ package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6894MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce
both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6894MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Base part number
IRF6894MTRPbF
Package Type
DirectFET^® Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF6894MTRPbF
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Pulsed Drain Current
Single Pulse Avalanche Energy 
I_AR
Avalanche Current 
Max.
25
±16
37
29
163
296
540
30
Units
V
A
mJ
A
4.0
ID = 37A
3.0
2.0
TJ = 125°C
1.0
TJ = 25°C
0.0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes
 Click on this section to link to the appropriate technical paper.
 Click on this section to link to the DirectFET^™ Website.
 Surface mounted on 1 in. square Cu board, steady state.
1
14
12 ^{ID= 30A}
10
8
VDS= 20V
VDS= 13V
VDS= 5V
6
4
2
0
0 10 20 30 40 50 60 70 80 90
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
 TC measured with thermocouple mounted to top (Drain) of part.
 Repetitive rating; pulse width limited by max. junction temperature.
 Starting T_J = 25°C, L = 1.2mH, R_G = 50, I_AS = 30A.
2016-10-13