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IRF60B217 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Battery powered circuits | |||
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Application
ï¬ï Brushed Motor drive applications
ï¬ï BLDC Motor drive applications
ï¬ï Battery powered circuits
ï¬ï Half-bridge and full-bridge topologies
ï¬ï Synchronous rectifier applications
ï¬ï Resonant mode power supplies
ï¬ï OR-ing and redundant power switches
ï¬ï DC/DC and AC/DC converters
ï¬ï DC/AC Inverters
Benefits
ï¬ï Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
ï¬ï Fully Characterized Capacitance and Avalanche SOA
ï¬ï Enhanced body diode dV/dt and dI/dt Capability
ï¬ï Lead-Free*
ï¬ï RoHS Compliant, Halogen-Free
D
G
S
G
Gate
IR MOSFET
StrongIRFETâ¢
IRHEFXF6E0TB® P2o1we7r MOSFET
VDSS
RDS(on) typ.
max
ID
60V
7.3mïï
9.0mïï
60A
S
D
G
TO-220AB
IRF60B217
D
Drain
S
Source
Base part number
IRF60B217
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRF60B217
30
ID = 36A
25
20
15
TJ = 125°C
10
5
TJ = 25°C
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
60
50
40
30
20
10
0
25
50
75
100 125 150 175
TC , CaseTemperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
2016â 01-05
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