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IPZ40N04S5-3R1_15 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – N-channel - Enhancement mode - Normal Level
IPZ40N04S5-3R1
OptiMOS™-5 Power-Transistor
Product Summary
Features
• OptiMOS™ - power MOSFET for automotive applications
VDS
RDS(on),max
ID
40 V
3.1 mW
40 A
PG-TSDSON-8
• N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
1
• 175°C operating temperature
• Green Product (RoHS compliant)
1
• 100% Avalanche tested
Type
IPZ40N04S5-3R1
Package
PG-TSDSON-8
Marking
5N0431
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS
I D=20A
I AS
-
V GS
-
P tot
T C=25°C
T j, T stg -
Value
40
40
160
140
40
±20
71
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2015-05-06