IPX50R190CE Datasheet, PDF (1/14 Pages) Infineon Technologies AG – 500V CoolMOSª CE Power Transistor

IPW50R190CE,IPP50R190CE
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation
whilerepresentingacostappealingalternativecomparedtostandard
MOSFETsintargetapplications.Theresultingdevicesprovideallbenefits
ofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.
Extremelylowswitchingandconductionlossesmakeswitching
applicationsevenmoreefficient,morecompact,lighterandcooler.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
PG-TO247
PG-TO220
tab
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingPWM
stagesfore.g.PCSilverbox,LCD&PDPTVandLighting.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
0.19
Ω
ID
24.8
A
Qg.typ
47.2
nC
ID,pulse
63
A
Eoss@400V
4.42
µJ
Type/OrderingCode
IPW50R190CE
IPP50R190CE
Package
PG-TO 247
PG-TO 220
Marking
5R190CE
RelatedLinks
see Appendix A
Final Data Sheet
1
Rev.2.2,2016-06-13