IPW90R800C3 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – CoolMOS™ Power Transistor

CoolMOS^™ Power Transistor
Features
• Lowest figure-of-merit R_ON x Q_g
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
IPW90R800C3
Product Summary
V _DS @ T _J=25°C
R _DS(on),max @ T _J= 25°C
Q _g,typ
900 V
0.8 Ω
42 nC
PG-TO247
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Type
IPW90R800C3
Package
PG-TO247
Marking
9R800C
Maximum ratings, at T _J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
Pulsed drain current²⁾
I_D
I _D,pulse
T _C=25 °C
T _C=100 °C
T _C=25 °C
6.9
A
4.4
15
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E _AS
E _AR
I _AR
dv /dt
I _D=1.4 A, V _DD=50 V
I _D=1.4 A, V _DD=50 V
V _DS=0...400 V
157
mJ
0.46
1.4
A
50
V/ns
Gate source voltage
V _GS
static
±20
V
AC (f>1 Hz)
±30
Power dissipation
P _tot
T _C=25 °C
104
W
Operating and storage temperature T _J, T _stg
-55 ... 150
°C
Mounting torque
M3 and M3.5 screws
60
Ncm
Rev. 1.0
page 1
2008-07-29
Please note the new package dimensions arccording to PCN 2009-134-A