IPW60R045CP_08 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – CoolMOS Power Transistor

CoolMOS^® Power Transistor
Features
• Worldwide best R _ds,on in TO247
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Product Summary
V _DS @ T_jmax
R _DS(on),max
Q _g,typ
IPW60R045CP
650 V
0.045 Ω
150 nC
PG-TO247-3-1
Type
IPW60R045CP
Package
PG-TO247-3-1
Ordering Code Marking
SP000067149 6R045
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
Pulsed drain current²⁾
I _D,pulse
T _C=100 °C
T _C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E _AS
E _AR
I _AR
dv /dt
I _D=11 A, V _DD=50 V
I _D=11 A, V _DD=50 V
V _DS=0...480 V
Gate source voltage
V _GS
static
AC (f >1 Hz)
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
Mounting torque
M3 and M3.5 screws
Value
60
38
230
1950
3
11
50
±20
±30
431
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
Rev. 2.2
page 1
2008-01-21
Please note the new package dimensions arccording to PCN 2009-134-A