|
IPW60R017C7 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – 600V CoolMOSª C7 Power Transistor | |||
|
IPW60R017C7
MOSFET
600VCoolMOSªC7PowerTransistor
CoolMOSâ¢C7isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
600VCoolMOSâ¢C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.
The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm².
Features
â¢Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
â¢IncreasedMOSFETdv/dtruggednessto120V/ns
â¢IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
â¢BestinclassRDS(on)/package
â¢QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Benefits
â¢IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe
application
â¢Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
â¢Enablinghighersystemefficiencybylowerswitchinglosses
â¢Increasedpowerdensitysolutionsduetosmallerpackages
â¢Suitableforapplicationssuchasserver,telecomandsolar
â¢Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto
lowEossandQg
Applications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
17
mâ¦
Qg.typ
240
nC
ID,pulse
495
A
ID,continuous @ Tj<150°C 129
A
Eoss@400V
30
µJ
Body diode di/dt
200
A/µs
Type/OrderingCode
IPW60R017C7
Package
PG-TO 247
Marking
60C7017
TO-247
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1
Rev.2.0,2016-03-01
|
▷ |