IPW50R350CP Datasheet, PDF (1/11 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor Features Ultra low gate charge Extreme dv/dt rated

CoolMOS^TM Power Transistor
Features
• Lowest figure-of-merit R_ON x Q_g
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC¹⁾ for target applications
Product Summary
V _DS @T_jmax
R _DS(on),max
Q _g,typ
IPW50R350CP
550 V
0.350 Ω
19 nC
TO247-3-1
CoolMOS CP is designed for:
• Hard- & soft switching SMPS topologies
• CCM PFC for Lamp Ballast, LCD & PDP TV
• PWM for Lamp Ballast, LCD & PDP TV
Type
IPW50R350CP
Package
PG-TO247
Marking
5R350P
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
Pulsed drain current²⁾
I _D,pulse
T _C=100 °C
T _C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E _AS
E _AR
I _AR
dv /dt
I _D=3.7 A, V _DD=50 V
I _D=3.7 A, V _DD=50 V
V _DS=0...400 V
Gate source voltage
V _GS
static
AC (f>1 Hz)
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
Mounting torque
M3 and M3.5 screws
Value
10
6
22
246
0.37
3.7
50
±20
±30
89
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
Rev. 2.0
page 1
2007-11-07
Please note the new package dimensions arccording to PCN 2009-134-A