IPUH6N03LB Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS®2 Power-Transistor

Type
OptiMOS^®2 Power-Transistor
Package
Marking
• Qualified according to JEDEC¹⁾ for target applications
• N-channel - Logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
IPUH6N03LB IPSH6N03LB
Product Summary
V _DS
R _DS(on),max
I_D
30 V
6.3 mΩ
50 A
Type
IPUH6N03LB
IPSH6N03LB
Package
Marking
PG-TO251-3
H6N03LB
PG-TO251-3-11
H6N03LB
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C²⁾
T _C=100 °C
Pulsed drain current
I _D,pulse T _C=25 °C³⁾
Avalanche energy, single pulse
E _AS
I _D=50 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=50 A, V _DS=20 V,
di /dt =200 A/µs,
T _j,max=175 °C
Gate source voltage⁴⁾
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1) _{J-STD20 and JESD22}
Rev. 0.3
page 1
Value
50
50
200
160
6
±20
83
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-05-15