IPU135N08N3G Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS(TM)3 Power-Transistor

OptiMOS^(TM)3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
IPU135N08N3 G
Product Summary
V _DS
R _DS(on),max
I_D
80 V
13.5 mΩ
50 A
Type
IPU135N08N3 G
Package
Marking
12 ₃
PG-TO251-3
135N08N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current²⁾
Avalanche energy, single pulse³⁾
I_D
I _D,pulse
E _AS
T _C=25 °C²⁾
T _C=100 °C
T _C=25 °C
I _D=50 A, R _GS=25 Ω
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
2) _{See figure 3 for more detailed information}
3) _{See figure 13 for more detailed information}
Rev. 2.1
page 1
Value
Unit
50
A
39
200
40
mJ
±20
V
79
W
-55 ... 175
°C
55/175/56
2008-11-04