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IPT65R195G7 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – 650V CoolMOSª C7 Gold series (G7) Power Transistor | |||
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IPT65R195G7
MOSFET
650VCoolMOSªC7Goldseries(G7)PowerTransistor
TheC7GOLDseries(G7)forthefirsttimebringstogetherthebenefitsof
theC7GOLDCoolMOSâ¢technology,4pinKelvinSourcecapabilityand
theimprovedthermalpropertiesoftheTOLLpackagetoenableapossible
SMDsolutionforhighcurrenttopologiessuchasPFCupto3kW
Features
â¢C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg.
â¢C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint.
â¢TOLLpackagehasinbuilt4thpinKelvinSourceconfigurationandlow
parasiticsourceinductance(~1nH).
â¢TOLLpackageisMSL1compliant,totalPb-free,haseasyvisual
inspectiongroovedleadsandisqualifiedforindustrialapplications
accordingtoJEDEC(J-STD20andJESD22).
â¢TOLLSMDpackagecombinedwithleadfreedieattachprocessenables
improvedthermalperformanceRth.
Benefits
â¢C7GoldFOMRDS(on)*Qgis14%betterthanpreviousC7650Venabling
fasterswitchingleadingtohigherefficiency.
â¢C7Goldcanreach33mâ¦ininTOLL115mm2footprint,whereasprevious
BICC7650Vwas45mâ¦in150mm2D2PAKfootprint.
â¢ReducingparasiticsourceinductancebyKelvinSourceimproves
efficiencybyfasterswitchingandeaseofuseduetolessringing.
â¢TOLLpackageiseasytouseandhasthehighestqualitystandards.
â¢ImprovedthermalsenableSMDTOLLpackagetobeusedinhigher
currentdesignsthanhasbeenpreviouslypossible.
Applications
PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server,
Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
195
mâ¦
Qg.typ
20
nC
ID,pulse
41
A
ID,continuous @ Tj<150°C 18
A
Eoss@400V
2.3
µJ
Body diode di/dt
60
A/µs
Type/OrderingCode
IPT65R195G7
Package
PG-HSOF-8
Marking
65C7195G
HSOF
Tab
12345 678
Drain
Tab
Gate
Pin 1
Driver
Source
Pin 2
Source
Pin 3-8
RelatedLinks
see Appendix A
Final Data Sheet
1
Rev.2.1,2016-03-14
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